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參數(shù)資料
| 型號(hào)： | APT10M11JVFR |
| 元件分類： | JFETs |
| 英文描述： | 144 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 121K |
| 代理商： | APT10M11JVFR |
DYNAMIC CHARACTERISTICS
APT10M11JVFR
050-5841
Rev
A
3-2004
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/s)
Reverse Recovery Charge
(IS D [Cont.], di/dt = 100A/s)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6
MIN
TYP
MAX
8600
10380
3200
4480
1180
1770
300
450
95
145
110
165
16
32
48
96
51
75
918
UNIT
pF
nC
ns
MIN
TYP
MAX
144
576
1.3
8
Tj = 25°C
220
Tj = 125°C
420
Tj = 25°C
0.8
Tj = 125°C
3.0
Tj = 25°C
10
Tj = 125°C
18
THERMAL/PACKAGECHARACTERISTICS
Symbol
RθJC
RθJA
VIsolation
Torque
MIN
TYP
MAX
0.28
40
2500
13
UNIT
°C/W
Volts
lbin
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 241H, RG = 25, Peak IL = 144A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5 IS ≤ -ID [Cont.], di/dt = 100A/s, VDD - VDSS, Tj - 150°C, RG = 2.0,
VR = 100V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
,,
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