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參數(shù)資料
| 型號： | APT10M11B2VR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 電源MOS V是一個高電壓N新一代通道增強(qiáng)型功率MOSFET。 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 63K |
| 代理商： | APT10M11B2VR |
0
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
UNIT
Volts
Amps
Volts
Watts
W/
°
C
°
C
Amps
mJ
UNIT
Volts
Amps
Ohms
μ
A
nA
Volts
MIN
TYP
MAX
100
100
0.011
250
1000
±
100
4
2
APT10M1B2VR
100
100
400
±
30
±
40
520
4.16
-55 to 150
300
100
50
2500
APT10M11B2VR
100V
100A
0.011
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
T-MAX
G
D
S
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
μ
A)
On State Drain Current
2 6
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°
C)
Gate-Source Leakage Current (V
GS
=
±
30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25
°
C
Pulsed Drain Current
1 6
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25
°
C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1 6
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
6
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 5792 1515
FAX: (33) 5 5647 9761
APT Website - http://www.advancedpower.com
POWER MOS V
Power MOS V
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Faster Switching
100% Avalanche Tested
Lower Leakage
New T-MAX
Package
(Clip-mounted TO-247 Package)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT10M11JVFR | 功能描述:MOSFET N-CH 100V 144A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT10M11JVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10M11JVRU2 | 功能描述:MOSFET N-CH 100V 142A SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT10M11JVRU3 | 功能描述:MOSFET N-CH 100V 142A SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT10M11LVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:High Voltage N-Channel enhancement mode power MOSFET |
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