- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51262 > APT10M11B2VFRG (MICROSEMI POWER PRODUCTS GROUP) 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APT10M11B2VFRG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 66K |
| 代理商： | APT10M11B2VFRG |
DYNAMIC CHARACTERISTICS
APT10M11 B2VFR - LVFR
050-5629
Rev
B
11-99
Z
q
JC
,THERMAL
IMPEDANCE
(
°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 6
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/s)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6W
MIN
TYP
MAX
8600
10300
3200
4480
1180
1770
300
450
95
145
110
165
16
32
33
66
46
70
816
UNIT
pF
nC
ns
MIN
TYP
MAX
100
400
1.3
5
Tj = 25°C
220
Tj = 125°C
420
Tj = 25°C
0.8
Tj = 125°C
3.0
Tj = 25°C
10
Tj = 125°C
18
THERMAL CHARACTERISTICS
Symbol
RqJC
RqJA
MIN
TYP
MAX
0.24
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum Tj
4 Starting Tj = +25°C, L = 500H, RG = 25W, Peak IL = 100A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5 The maximum current is limited by lead temperature.
3 See MIL-STD-750 Method 3471
6 IS -ID [Cont.], di/dt = 100A/s, VR = 50V, Tj 150°C, RG = 2.0W
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT10M11LVFR | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT10M13JNR | 150 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10M15JNR | 140 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10M20SFLL | 92 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10M20BFLL | 92 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT10M11B2VR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10M11JVFR | 功能描述:MOSFET N-CH 100V 144A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT10M11JVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10M11JVRU2 | 功能描述:MOSFET N-CH 100V 142A SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT10M11JVRU3 | 功能描述:MOSFET N-CH 100V 142A SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。