- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51261 > APT10090SLL (MICROSEMI POWER PRODUCTS GROUP) 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APT10090SLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 95K |
| 代理商： | APT10090SLL |
050-7002
Rev
C
7-2003
APT10090BLL - SLL
Typical Performance Curves
5V
5.5V
6V
6.5
VGS =15,10V& 7.5V
7V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=10V
VGS=20V
VDS> ID (ON) x RDS(ON) MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS(TH)
,THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
NORMALIZED TO
V
GS
= 10V @ I
D
= 6A
30
25
20
15
10
5
0
12
10
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0.0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS(ON)
vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, R
DS(ON)
vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
5
10
15
20
25
30
0
1
23
4
567
8
0
5
10
15
20
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125
150
30
25
20
15
10
5
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
D
= 6A
V
GS
= 10V
0.164
0.257
0.00592F
0.125F
Power
(Watts)
RC MODEL
Junction
temp. ( ”C)
Case temperature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT10090BLLG | 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT10090BLL | 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT10090SLLG | 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10090BLL | 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT10090SLL | 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT10090SLLG | 功能描述:MOSFET N-CH 1000V 12A D3PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT100DL60B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Ultrasoft Recovery Rectifi er Diode |
| APT100DL60BG | 制造商:Microsemi Corporation 功能描述:FAST RECOVERY EPITAXIAL DIODE - DL - Rail/Tube 制造商:Microsemi Corporation 功能描述:DIODE ULT SOFT 600V 100A TO-247 |
| APT100DL60HJ | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ISOTOP Fast Diode Full Bridge Power Module |
| APT100DL60S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Ultrasoft Recovery Rectifi er Diode |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。