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參數(shù)資料
| 型號(hào)： | APT1004RCN |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 3.6 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | TO-254AA, 3 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 134K |
| 代理商： | APT1004RCN |
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
100
200
300
400
500
0
4
8
12
16
20
0
2
4
6
8
10
0
2
4
6
8
10
12
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
-50
-25
0
25
50
75 100 125 150
APT1004RCN
I
D = 0.5 ID [Cont.]
V
GS = 10V
5
4
3
2
1
0
16
12
8
4
0
4
3
2
1
0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
0.4
050-0017
Rev
B
5V
4.5V
5.5V
4V
5V
4.5V
4V
VGS=10V
VGS=20V
VGS=10V
6V
VGS=5.5V,6V &10V
TJ = -55°C
TJ = +25°C
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
230 SEC. PULSE TEST
TJ = +125°C
TJ = +25°C
TJ = -55°C
NORMALIZED TO
V
GS = 10V @ 0.5 ID [Cont.]
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| APT10078SFLL | 14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1004RDN | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT1004RGN | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1004RKN | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT10050B2LC | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage |
| APT10050B2VFR | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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