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參數(shù)資料
| 型號(hào)： | APT1004RBN |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 4.4 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 0K |
| 代理商： | APT1004RBN |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
°C)
T
J
, JUNCTION TEMPERATURE (
°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
°C)
T
C
, CASE TEMPERATURE (
°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
(ON),
DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
050-0011
Rev
C
-50
-25
0
25
50
75
100 125 150
1.4
1.2
1.0
0.8
0.6
0.4
APT1004R/1004R2BN
DS
D
DS
V
> I (ON) x R
(ON)MAX.
230
SEC. PULSE TEST
5V
4.5V
GS
V
=5.5V,6V &10V
4V
10
0
02
4
6
8
2
4
8
6
2
3
5
1
0
4
J
T =+125
°C
T =+25
°C
J
T =-55
°C
J
T =+125
°C
T =-55
°C
J
T =+25
°C
J
-25
0
25
50
75
100 125 150
-50
25
50
75
100
125
150
0
0.0
2.5
2.0
1.5
1.0
0.5
200
300
400
500
100
0
APT1004R2BN
APT1004RRBN
1
2
3
4
5
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
2.5
5V
4.5V
V
=10V
GS
6V
5.5V
4V
V
=10V
GS
V
=20V
24
6
8
10
12
0.7
0.9
0.8
1.0
1.1
1.2
5
0
1
3
4
2
-25
0
25
50
75
100 125 150
-50
0
4
812
16
20
2.0
1.5
1.0
0
0.5
0.0
T
J
= 25
°C
2
SEC. PULSE TEST
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT1004RBN | 4.4 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT1004R2BN | 4 A, 1000 V, 4.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT10050B2LC | 21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10050LLC | 21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT10050B2VRG | 21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1004RBNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4.4A I(D) | TO-247AD |
| APT1004RCN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1004RDN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT1004RGN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1004RKN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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