參數(shù)資料
型號(hào): APT10045LLLG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 23 A, 1000 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: TO-264, 3 PIN
文件頁數(shù): 4/5頁
文件大?。?/td> 92K
代理商: APT10045LLLG
VDS=500V
VDS=200V
VDS=800V
I
D
= 23A
Crss
Ciss
Coss
050-7009
Rev
C
3-2003
APT10045B2LL - LLL
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
20,000
10,000
1,000
100
10
200
100
10
1
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
10
100
1000
0
10
20
30
40
50
0
50
100
150
200
250
0.3
0.5
0.7
0.9
1.1
1.3
1.5
92
50
10
1
16
12
8
4
0
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
10mS
1mS
100S
TJ =+150°C
TJ =+25°C
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 670V
R
G
= 5
T
J
= 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
0
10
20
30
40
0
10
20
30
40
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35 40
45
50
160
140
120
100
80
60
40
20
0
2000
1500
1000
500
0
60
50
40
30
20
10
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
DD
= 670V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD
= 670V
I
D
= 23A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
Typical Performance Curves
Eon
Eoff
V
DD
= 670V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
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