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參數(shù)資料
| 型號： | APT10045B2FLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 1000 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 92K |
| 代理商： | APT10045B2FLL |
050-7039
Rev
C
3-2003
DYNAMIC CHARACTERISTICS
APT10045B2FLL - LFLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -23A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -23A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -23A, di/dt = 100A/s)
Peak Recovery Current
(IS = -23A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
23
92
1.3
18
Tj = 25°C
340
Tj = 125°C
640
Tj = 25°C
1.78
Tj = 125°C
4.47
Tj = 25°C
11.4
Tj = 125°C
16.4
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.22
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 9.45mH, RG = 25, Peak IL = 23A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
23A di
/dt ≤ 700A/s V
R ≤
V
DSS
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 500V
I
D
= 23A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 500V
I
D
= 23A @ 25°C
R
G
= 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 670V, V
GS
= 15V
I
D
= 23A, R
G
= 5
INDUCTIVE SWITCHING @ 125°C
V
DD
= 670V V
GS
= 15V
I
D
= 23A, R
G
= 5
MIN
TYP
MAX
4350
715
120
154
26
97
10
5
30
8
639
380
1046
451
UNIT
pF
nC
ns
J
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
相關PDF資料 |
PDF描述 |
|---|---|
| APT10045B2FLLG | 23 A, 1000 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10045LLL | 23 A, 1000 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT10045B2LL | 23 A, 1000 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10045B2LL | 23 A, 1000 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10045LLL | 23 A, 1000 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT10045B2FLL_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10045B2FLLG | 功能描述:MOSFET N-CH 1000V 23A T-MAX RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT10045B2LL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10045B2LL_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10045B2LLG | 功能描述:MOSFET N-CH 1000V 23A T-MAX RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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