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參數(shù)資料
| 型號(hào)： | APT10043JVR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 22 A, 1000 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 201K |
| 代理商： | APT10043JVR |
DYNAMIC CHARACTERISTICS
APT10043JVR
050-5590
Rev
B
6-2006
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 5.37mH, RG = 25, Peak IL = 22A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
THERMAL / PACKAGE CHARACTERISTICS
Symbol
RθJC
RθJA
VIsolation
Torque
MIN
TYP
MAX
0.25
40
2500
13
UNIT
°C/W
Volts
lbin
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 0.5 VDSS
I
D = ID[Cont.] @ 25°C
V
GS = 15V
V
DD = 0.5 VDSS
I
D = ID[Cont.] @ 25°C
R
G = 0.6
MIN
TYP
MAX
7500
9000
675
945
310
465
320
480
38
57
169
250
14
28
10
20
51
75
11
22
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (I
S = -ID[Cont.], dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -ID[Cont.], dlS/dt = 100A/s)
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
22
88
1.3
1100
17
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| APT10045B2FLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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