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    參數(shù)資料
    型號: APT10040B2VRG
    廠商: MICROSEMI POWER PRODUCTS GROUP
    元件分類: JFETs
    英文描述: 25 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
    封裝: TMAX-3
    文件頁數(shù): 2/4頁
    文件大?。?/td> 77K
    代理商: APT10040B2VRG
    1 Repetitive Rating: Pulse width limited by maximum junction
    3 See MIL-STD-750 Method 3471
    temperature.
    4 Starting Tj = +25°C, L = 9.60mH, RG = 25, Peak IL = 25A
    2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
    APT Reserves the right to change, without notice, the specifications and information contained herein.
    DYNAMIC CHARACTERISTICS
    APT10040 B2VR - LVR
    Symbol
    C
    iss
    C
    oss
    C
    rss
    Q
    g
    Q
    gs
    Q
    gd
    t
    d(on)
    t
    r
    t
    d(off)
    t
    f
    Test Conditions
    V
    GS
    = 0V
    V
    DS
    = 25V
    f = 1 MHz
    V
    GS
    = 10V
    V
    DD
    = 0.5 V
    DSS
    I
    D
    = 0.5 I
    D[Cont.]
    @ 25°C
    V
    GS
    = 15V
    V
    DD
    = 0.5 V
    DSS
    I
    D
    = I
    D[Cont.]
    @ 25°C
    R
    G
    = 0.6
    MIN
    TYP
    MAX
    7830
    9400
    715
    1010
    386
    580
    415
    630
    37
    45
    216
    330
    13
    26
    13
    26
    57
    86
    920
    UNIT
    pF
    nC
    ns
    Characteristic
    Input Capacitance
    Output Capacitance
    Reverse Transfer Capacitance
    Total Gate Charge 3
    Gate-Source Charge
    Gate-Drain ("Miller ") Charge
    Turn-on Delay Time
    Rise Time
    Turn-off Delay Time
    Fall Time
    SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
    UNIT
    Amps
    Volts
    ns
    C
    MIN
    TYP
    MAX
    25
    100
    1.3
    1060
    25.5
    THERMAL CHARACTERISTICS
    Symbol
    RθJC
    RθJA
    MIN
    TYP
    MAX
    0.20
    40
    UNIT
    °C/W
    Characteristic
    Junction to Case
    Junction to Ambient
    Symbol
    I
    S
    I
    SM
    V
    SD
    t
    rr
    Q
    rr
    Characteristic / Test Conditions
    Continuous Source Current
    (Body Diode)
    Pulsed Source Current 1
    (Body Diode)
    Diode Forward Voltage 2 (V
    GS
    = 0V, I
    S
    = -I
    D[Cont.]
    )
    Reverse Recovery Time (I
    S
    = -I
    D[Cont.]
    , dl
    S
    /dt = 100A/s)
    Reverse Recovery Charge (I
    S
    = -I
    D[Cont.]
    , dl
    S
    /dt = 100A/s)
    050-5909
    Rev
    A
    5-2002
    050-5909
    revA
    8-2000
    Z
    θJC
    ,THERMAL
    IMPEDANCE
    (°C/W)
    10-5
    10-4
    10-3
    10-2
    10-1
    1.0
    10
    RECTANGULARPULSEDURATION(SECONDS)
    FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
    0.2
    0.1
    0.05
    0.01
    0.005
    0.001
    Note:
    Duty Factor D =
    t1/t
    2
    Peak TJ = PDM x ZθJC + TC
    t1
    t2
    P
    DM
    0.1
    SINGLE PULSE
    0.02
    0.05
    0.2
    D=0.5
    0.01
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