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參數(shù)資料
| 型號： | APT1003RSLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 101K |
| 代理商： | APT1003RSLLG |
050-7119
Rev
A
1-2004
APT1003RBLL_SLL
Typical Performance Curves
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
5.5V
6V
6.5V
5V
VGS =15 & 10V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
7V
7.5V
0
5
10
15
20
25
30
0
1
2
3
45
678
9
0
1
2
3
4
5
6
7
8
9
10
25
50
75
100
125
150
-50 -25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125
150
16
14
12
10
8
6
4
2
0
4
3.5
3
2.5
2
1.5
1
0.5
0
2.5
2.0
1.5
1.0
0.5
0.0
I
D
= 2A
V
GS
= 10V
NORMALIZED TO
V
GS
= 10V @ 2A
10
8
6
4
2
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.386
0.508
0.00336F
0.0903F
Power
(watts)
RC MODEL
Junction
temp. (
°C)
Case temperature. (
°C)
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| APT1003RSLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| APT1003RSLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
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