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參數(shù)資料
| 型號(hào)： | APT1003RSLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | APT1003RSLL |
050-7119
Rev
A
1-2004
APT1003RBLL_SLL
Typical Performance Curves
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D
3
PAK Package Outline
IC
D.U.T.
APT15DF100
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
90%
Switching Energy
t
d(off)
t
f
10%
0
Drain Current
Drain Voltage
GateVoltage
T
J
125°C
10%
90%
Switching Energy
t
d(on)
t
r
10%
5%
Drain Current
Drain Voltage
GateVoltage
T
J
125°C
5%
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PDF描述 |
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| APT1003RBLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1003RBLLG | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1003RSLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1003RBLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1003RSLLG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APT1004 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT10040B2VFR | 制造商:Advanced Power Technology 功能描述:MOSFET Transistor, N-Channel, TO-247VAR |
| APT10040B2VFR_02 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10040B2VFRG | 功能描述:MOSFET N-CH 1000V 25A T-MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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