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參數(shù)資料
| 型號： | APT1003RSFLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 102K |
| 代理商： | APT1003RSFLLG |
050-7110
Rev
A
1-2004
Typical Performance Curves
APT1003RBFLL_SFLL
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D
3
PAK Package Outline
IC
D.U.T.
APT15DF100
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
90%
Switching Energy
t
d(off)
t
f
10%
0
Drain Current
Drain Voltage
GateVoltage
T
J
125°C
10%
90%
Switching Energy
t
d(on)
t
r
10%
5%
Drain Current
Drain Voltage
GateVoltage
T
J
125°C
5%
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PDF描述 |
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| APT1003RCLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
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| APT1003RKFLLG | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| APT1003RKFLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| APT1003RKFLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1003RSFLLG /TR | 制造商:Microsemi Corporation 功能描述:HIGH VOLTAGE, N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Tape and Reel |
| APT1003RSLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET |
| APT1003RSLLG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APT1004 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT10040B2VFR | 制造商:Advanced Power Technology 功能描述:MOSFET Transistor, N-Channel, TO-247VAR |
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