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參數(shù)資料
| 型號： | APT10035LLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 92K |
| 代理商： | APT10035LLL |
20,000
10,000
1,000
100
200
100
10
1
APT10035B2LL - LLL
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
10
100
1000
0
10
20
30
40
50
0
50
100
150
200
250
0.3
0.5
0.7
0.9
1.1
1.3
1.5
112
50
10
1
16
12
8
4
0
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
10mS
1mS
100S
TJ =+150°C
TJ =+25°C
050-7010
Rev
C
3-2003
Typical Performance Curves
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 670V
R
G
= 5
T
J
= 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
0
10
20
30
40
50
0
10
20
30
40
50
0
10
20
30
40
50
0
5
10
152025
30
35 404550
180
160
140
120
100
80
60
40
20
0
2500
2000
1500
1000
500
0
80
60
40
20
0
5000
4000
3000
2000
1000
0
V
DD
= 670V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD
= 670V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
V
DD
= 670V
I
D
= 28A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
Crss
Ciss
Coss
VDS=500V
VDS=200V
VDS=800V
I
D
= 28A
相關PDF資料 |
PDF描述 |
|---|---|
| APT10035LLLG | 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT10035LLL | 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT10035B2LL | 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10035B2LL | 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT10035LLLG | 功能描述:MOSFET N-CH 1000V 28A TO-264 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT1003R5AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-3 |
| APT1003R5BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4.5A I(D) | TO-247AD |
| APT1003R5CN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-254AA |
| APT1003R5DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4.5A I(D) | CHIP |
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