參數(shù)資料
型號(hào)： APT10035JLL
元件分類(lèi)： JFETs
英文描述： 25 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOTOP-4
文件頁(yè)數(shù)： 4/5頁(yè)
文件大?。?/td> 92K
代理商： APT10035JLL
050-7016
Rev
C
3-2003
APT10035JLL
Typical Performance Curves
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
10
100
1000
0
10
20
30
40
50
0
50
100
150
200
250
0.3
0.5
0.7
0.9
1.1
1.3
1.5
100
50
10
1
16
12
8
4
0
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
10mS
1mS
100S
Crss
Ciss
Coss
TJ =+150°C
TJ =+25°C
VDS=500V
VDS=200V
VDS=800V
I
D
= 28A
20,000
10,000
1,000
100
200
100
10
1
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 670V
R
G
= 5
T
J
= 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
0
10
20
30
40
50
0
10
20
30
40
50
0
10
20
30
40
50
0
5
1015
20
2530
35 40
45
50
180
160
140
120
100
80
60
40
20
0
2500
2000
1500
1000
500
0
80
60
40
20
0
5000
4000
3000
2000
1000
0
V
DD
= 670V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD
= 670V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
V
DD
= 670V
I
D
= 28A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT10035JLL_03 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10035LFLL 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10035LFLLG 功能描述:MOSFET N-CH 1000V 28A TO-264 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT10035LLL 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10035LLLG 功能描述:MOSFET N-CH 1000V 28A TO-264 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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