參數(shù)資料
型號： APT10035JFLL
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 25 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOTOP-4
文件頁數(shù)： 4/5頁
文件大?。?/td> 160K
代理商： APT10035JFLL
050-7036
Rev
D
2-2009
APT10035JFLL
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
10
100
1000
0
10
20
30
40
50
0
50
100
150
200
250
0.3
0.5
0.7
0.9
1.1
1.3
1.5
100
50
10
1
16
12
8
4
0
Crss
Ciss
Coss
TJ =+150°C
TJ =+25°C
VDS=500V
VDS=200V
VDS=800V
ID = 28A
20,000
10,000
1,000
100
200
100
10
1
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15,RISE AND FALL TIMES vs CURRENT
ID (A)
RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
VDD = 670V
RG = 5
TJ = 125 °C
L = 100 H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f(ns)
0
10
20
30
40
50
0
10
20
30
40
50
0
10
20
30
40
50
0
5 10 152025 30 35 404550
180
160
140
120
100
80
60
40
20
0
2500
2000
1500
1000
500
0
80
60
40
20
0
5000
4000
3000
2000
1000
0
VDD = 670V
RG = 5
TJ = 125°C
L = 100 H
VDD = 670V
RG = 5
TJ = 125° C
L = 100 H
E
ON includes
diode reverse recovery.
VDD = 670V
ID = 28A
TJ = 125°C
L = 100 H
E
ON includes
diode reverse recovery.
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
10mS
1mS
100S
相關PDF資料
PDF描述
APT10035JFLL 25 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10035JLL 25 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10035LFLL 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT10035B2FLL 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10035B2FLLG 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術(shù)參數(shù)
參數(shù)描述
APT10035JFLL_03 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10035JLL 功能描述:MOSFET N-CH 1000V 25A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:*
APT10035JLL_03 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10035LFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10035LFLLG 功能描述:MOSFET N-CH 1000V 28A TO-264 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*