參數(shù)資料
型號(hào)： APT10030L2VR
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi)： JFETs
英文描述： 33 A, 1000 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： TO-264MAX, 3 PIN
文件頁(yè)數(shù)： 3/4頁(yè)
文件大?。?/td> 133K
代理商： APT10030L2VR
050-5990
Rev
A
5-2004
Typical Performance Curves
APT10030L2VR
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
5V
5.5V
4V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
4.5V
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
0
10203040
50
60
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
120
100
80
60
40
20
0
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
I
D = 16.5A
V
GS = 10V
80
70
60
50
40
30
20
10
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGS=10V
VGS=20V
NORMALIZED TO
V
GS = 10V @ 16.5A
VGS =15, 10, 6.5 & 6V
0.0545
0.0957
0.0487F
0.922F
Power
(watts)
RC MODEL
Junction
temp. (
°C)
Case temperature. (
°C)
相關(guān)PDF資料
PDF描述
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