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參數(shù)資料
| 型號： | APT10026L2LLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-264MAX, 3 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 103K |
| 代理商： | APT10026L2LLG |
050-7024
Rev
B
12-2003
APT10026L2LL
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
Crss
Ciss
Coss
TJ=+150°C
TJ=+25°C
1
10
100
1000
0
10
20
30
40
50
0
50
100
150
200
250
300
350 400
0.3
0.5
0.7
0.9
1.1
1.3
1.5
10mS
1mS
100S
TC = +25°C
TJ = +150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
I
D
= 38A
152
50
10
1
16
12
8
4
0
30,000
10,000
1,000
100
200
100
10
1
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 667V
R
G
= 3
T
J
= 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
5 10 15 20 25 30 35 40 45 50 55 60
5 10 15 20 25 30 35
40 45 50 55 60
5 10 1520
253035 4045 50 55 60
0
5
10
15
20
25
30
35 40
45
50
V
DD
= 667V
I
D
= 38A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
160
140
120
100
80
60
40
20
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
DD
= 667V
R
G
= 3
T
J
= 125°C
L = 100H
V
DD
= 667V
R
G
= 3
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
100
80
60
40
20
0
10000
8000
6000
4000
2000
0
VDS = 500V
VDS = 200V
VDS = 800V
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|---|---|
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