參數資料
型號: APT10025JVR
元件分類: JFETs
英文描述: 34 A, 1000 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOTOP-4
文件頁數: 4/4頁
文件大?。?/td> 71K
代理商: APT10025JVR
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
APT10025JVR
050-5580
Rev
A
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
ISOTOP
is a Registered Trademark of SGS Thomson.
1
5
10
50 100
500 1000
.01
.1
1
10
50
0
250
500
750
1000
1250
1500
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TC =+25°C
TJ =+150°C
SINGLE PULSE
200
100
50
10
5
1
.5
.1
20
16
12
8
4
0
60,000
10,000
5,000
1,000
500
100
50
10
5
1
OPERATION HERE
LIMITED BY RDS (ON)
TJ =+150°C
TJ =+25°C
VDS=500V
VDS=200V
VDS=100V
Crss
Coss
Ciss
I
D
= I
D
[Cont.]
10
S
1mS
10mS
100mS
DC
100
S
"UL Recognized" File No. E145592
相關PDF資料
PDF描述
APT10026JNR 33 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10026L2FLL 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10026L2FLL 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10026RKVR 0.48 A, 1000 V, 26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
APT1002R4BN-GULLWING 6.5 A, 1000 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
相關代理商/技術參數
參數描述
APT10025PVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10026JFLL 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR
APT10026JFLL_03 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10026JLL 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR
APT10026JLL_03 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.