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參數(shù)資料
| 型號： | APT10025JVR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 1000 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 71K |
| 代理商： | APT10025JVR |
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
R
G
= 0.6
MIN
TYP
MAX
15000
18000
1360
1900
710
1065
660
990
51
75
250
375
22
44
20
40
97
145
16
32
UNIT
pF
nC
ns
APT10025JVR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
050-5580
Rev
A
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
s)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
34
136
1.3
1300
38
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 6.23mH, RG = 25, Peak IL = 34A
2 Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL / PACKAGE CHARACTERISTICS
Symbol
RθJC
RθJA
VIsolation
Torque
MIN
TYP
MAX
0.18
40
2500
13
UNIT
°C/W
Volts
lbin
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
Z
θJC
,THERMAL
IMPEDANCE
(
°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.2
0.1
0.05
0.01
0.005
0.001
0.0005
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
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