- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51260 > APT10021JFLL (MICROSEMI POWER PRODUCTS GROUP) 37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APT10021JFLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 156K |
| 代理商： | APT10021JFLL |
050-7035
Rev
C
4-2004
APT10021JFLL
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
1000
0
10
20
30
40
50
0
100
200
300
400
500
600
0.3
0.5
0.7
0.9
1.1
1.3
1.5
148
100
50
10
1
16
12
8
4
0
1mS
100S
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
VDS=500V
VDS=200V
VDS=800V
I
D = 37A
TJ=+150°C
TJ=+25°C
Crss
Ciss
Coss
10mS
30,000
10,000
1,000
10
300
100
10
1
Eon
Eoff
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 667V
R
G = 5
T
J = 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
5 10 15 20 25 30 35 40 45 50 55 60
5 101520 2530 354045 50 55 60
0
5
10 15 20 25 30 35 40 45 50
V
DD
= 667V
I
D
= 37A
T
J
= 125°C
L = 100H
E
ON includes
diode reverse recovery.
td(on)
td(off)
400
300
200
100
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
DD = 667V
R
G = 5
T
J = 125°C
L = 100H
80
70
60
50
40
30
20
10
0
12,000
10,000
8,000
6,000
4,000
2,000
0
V
DD = 667V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
相關PDF資料 |
PDF描述 |
|---|---|
| APT10025JLC | 34 A, 1000 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10025JVFR | 34 A, 1000 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10026JFLL | 30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10026JLL | 30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10026JLL | 30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT10021JFLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10021JLL | 功能描述:MOSFET N-CH 1000V 37A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APT10021JLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10025JLC | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
| APT10025JVFR | 功能描述:MOSFET N-CH 1000V 34A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
發(fā)布緊急采購，3分鐘左右您將得到回復。