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參數(shù)資料
| 型號(hào)： | APT1001R6SFLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大小： | 153K |
| 代理商： | APT1001R6SFLLG |
050-7126
Rev
A
4-2004
APT1001R6BFLL_SFLL
Typical Performance Curves
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain (Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D
3PAKPackageOutline
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
IC
D.U.T.
APT15DF100
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
Drain Current
DrainVoltage
Switching Energy
90%
5%
t
r
5%
10%
GateVoltage
10%
t
d(on)
T
J125°C
Switching Energy
Drain Current
DrainVoltage
GateVoltage
T
J125°C
10%
t
d(off)
90%
t
f
90%
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT1001R6SFLL | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1001R6SFLL | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1001R6BFLL | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT1001R6BN-BUTT | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT901R6BN-GULLWING | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1001RAN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3 |
| APT1001RBLC | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
| APT1001RBN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1001RBNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD |
| APT1001RBVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
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