參數(shù)資料
型號(hào)： APT1001R6BN
廠商： Advanced Power Technology Ltd.
元件分類： 圓形連接器
英文描述： Circular Connector; No. of Contacts:56; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
中文描述： N溝道增強(qiáng)型高壓功率MOSFET
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 50K
代理商： APT1001R6BN
MIN
TYP
MAX
240
240
32
26
APT1001R6BN
APT1002R4BN
MIN
TYP
MAX
APT1001R6BN
8
APT1002R4BN
6.5
32
26
1.3
910
5
APT1001R6BN
APT1002R4BN
450
2.5
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
R
G
= 1.8
MIN
TYP
MAX
1530
230
80
66
6.5
36
14
13
55
19
1800
325
120
105
10
54
28
26
82
37
UNIT
pF
nC
ns
APT1001R6BN
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions / Part Number
Continuous Source Current
(Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
μ
s)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
μ
s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
UNIT
Amps
Volts
ns
μ
C
Test Conditions / Part Number
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec.
I
DS
= I
D
[Cont.], V
DS
= P
D
/ I
D
[Cont.], t = 1 Sec.
Symbol
SOA1
SOA2
I
LM
Characteristic
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
UNIT
Watts
Amps
SAFE OPERATING AREA CHARACTERISTICS
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380
μ
S, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
0
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.5
0.1
0.05
0.01
0.005
0.001
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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