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參數(shù)資料
| 型號： | APT1001R1BN |
| 元件分類： | JFETs |
| 英文描述： | 10.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 52K |
| 代理商： | APT1001R1BN |
MIN
TYP
MAX
310
APT1001R1BN
42
APT1001R3BN
40
MIN
TYP
MAX
APT1001R1BN
10.5
APT1001R3BN
10
APT1001R1BN
42
APT1001R3BN
40
1.3
636
1200
4.5
11
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°C
R
G
= 1.8
MIN
TYP
MAX
2460
2950
360
500
105
160
90
130
9.3
14
47
70
15
30
16
32
64
95
24
48
UNIT
pF
nC
ns
APT1001R1/1001R3BN
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions / Part Number
Continuous Source Current
(Body Diode)
Pulsed Source Current 1
(Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
UNIT
Amps
Volts
ns
C
Test Conditions / Part Number
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec.
I
DS
= I
D
[Cont.], V
DS
= P
D
/ I
D
[Cont.], t = 1 Sec.
Symbol
SOA1
SOA2
I
LM
Characteristic
Safe Operating Area
Inductive Current Clamped
UNIT
Watts
Amps
SAFE OPERATING AREA CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-0007
Rev
C
Z
θJC
,THERMAL
IMPEDANCE
(
°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.5
0.1
0.05
0.01
0.005
0.001
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT1001R3BN | 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT1001R1HVR | 8.4 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| APT1001R1SN | 10.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1001R3BN-BUTT | 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1001R3BN-GULLWING | 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1001R1BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD |
| APT1001R1BVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT1001R1DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT1001R1HN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO |
| APT1001R1HVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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