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參數(shù)資料
| 型號： | APM9966COC-TUL |
| 廠商： | Anpec Electronics Corporation |
| 英文描述： | Dual N-Channel Enhancement Mode MOSFET |
| 中文描述： | 雙N溝道增強型MOS管 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大小： | 134K |
| 代理商： | APM9966COC-TUL |
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Table 1. SnPb Entectic Process
–
Package Peak Reflow Temperatures
Package Thickness
Volume mm
3
<350
240 +0/-5
°
C
225 +0/-5
°
C
Volume mm
3
≥
350
225 +0/-5
°
C
225 +0/-5
°
C
<2.5 mm
≥
2.5 mm
Table 2. Pb-free Process
–
Package Classification Reflow Temperatures
Package Thickness
Volume mm
3
<350
<1.6 mm
260 +0
°
C*
1.6 mm
–
2.5 mm
260 +0
°
C*
≥
2.5 mm
250 +0
°
C*
*Tolerance: The device manufacturer/supplier
shall
assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0
°
C.
For example 260
°
C+0
°
C) at the rated MSL level.
Volume mm
3
350-2000
260 +0
°
C*
250 +0
°
C*
245 +0
°
C*
Volume mm
3
>2000
260 +0
°
C*
245 +0
°
C*
245 +0
°
C*
'"#$
Test item
Method
Description
SOLDERABILITY
HOLT
PCT
TST
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
245
°
C,5 SEC
1000 Hrs Bias @ 125
°
C
168 Hrs, 100% RH, 121
°
C
-65
°
C ~ 150
°
C, 200 Cycles
&%
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| APM9966 | Dual N-Channel Enhancement Mode MOSFET |
| APM9966C | Dual N-Channel Enhancement Mode MOSFET |
| APM9966OC-TR | Dual N-Channel Enhancement Mode MOSFET |
| APM9966CKC-TR | Dual N-Channel Enhancement Mode MOSFET |
| APM9966COC-TR | Dual N-Channel Enhancement Mode MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APM9966KC-TR | 制造商:ANPEC 制造商全稱:Anpec Electronics Coropration 功能描述:Dual N-Channel Enhancement Mode MOSFET |
| APM9966OC-TR | 制造商:ANPEC 制造商全稱:Anpec Electronics Coropration 功能描述:Dual N-Channel Enhancement Mode MOSFET |
| APM9968C | 制造商:ANPEC 制造商全稱:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET |
| APM9968CO | 制造商:ANPEC 制造商全稱:Anpec Electronics Coropration 功能描述:Dual N-Channel Enhancement Mode MOSFET |
| APM9968COC-TR | 制造商:ANPEC 制造商全稱:Anpec Electronics Coropration 功能描述:Dual N-Channel Enhancement Mode MOSFET |
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