參數(shù)資料
型號: APM9930CKC-TR
廠商: Anpec Electronics Corporation
英文描述: Dual Enhancement Mode MOSFET (N-and P-Channel)
中文描述: 雙增強型MOS管(N溝道和P溝道)
文件頁數(shù): 2/13頁
文件大小: 196K
代理商: APM9930CKC-TR
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
2
APM9930/ C
APM9930/C
Min.
Typ.
Symbol
Parameter
Test Condition
Max.
Unit
Static
N-Ch
20
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
μ
A
P-Ch
-20
V
V
DS
=18V , V
GS
=0V
V
DS
=-18V , V
GS
=0V
V
DS
=V
GS
, I
DS
=250
μ
A
V
DS
=V
GS
, I
DS
=-250
μ
A
V
GS
=
±
12V , V
DS
=0V
V
GS
=
±
10V , V
DS
=0V
V
GS
=10V , I
DS
=15A
V
GS
=4.5V , I
DS
=5A
V
GS
=2.5V , I
DS
=2A
V
GS
=-10V , I
DS
=-5A
V
GS
=-4.5V , I
DS
=-3.2A
V
GS
=-2.5V , I
DS
=-1A
N-Ch
1
I
DSS
Zero Gate Voltage Drain
Current
P-Ch
-1
μ
A
N-Ch
0.6
1.3
V
GS(th)
Gate Threshold Voltage
P-Ch
-0.6
-1.3
V
N-Ch
±100
I
GSS
Gate Leakage Current
P-Ch
±100
nA
12
15
17
20
N-Ch
25
30
60
70
72
80
R
DS(ON)
a
Drain-Source On-state
Resistance
P-Ch
98
105
m
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Absolute Maximum Ratings
(T
A
= 25
°
C unless otherwise noted)
Symbol
V
DSS
V
GSS
I
D
I
DM
Parameter
N-Channel
20
P-Channel
-20
Unit
Drain-Source Voltage
Gate-Source Voltage
±12
±12
V
*
Maximum Drain Current – Continuous
15
-5
Maximum Drain Current – Pulsed
30
-10
A
T
A
=25
°
C
2.5
2.5
P
D
Maximum Power Dissipation
T
A
=100
°
C
1.0
1.0
W
T
J
Maximum Junction Temperature
150
°
C
T
STG
R
θ
jA
Storage Temperature Range
-55 to 150
°
C
Thermal Resistance – Junction to Ambient
50
°
C/W
* Surface Mounted on FR4 Board, t
10 sec.
Notes
a
: Pulse test ; pulse width
300
μ
s, duty cycle
2
%
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