參數(shù)資料
型號: APM9930C
廠商: Anpec Electronics Corporation
英文描述: Dual Enhancement Mode MOSFET (N-and P-Channel)
中文描述: 雙增強型MOS管(N溝道和P溝道)
文件頁數(shù): 3/13頁
文件大?。?/td> 196K
代理商: APM9930C
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
3
APM9930/ C
Notes
a
: Guaranteed by design, not subject to production testing
Electrical Characteristics ( Cont.)
(T
A
= 25
°
C unless otherwise noted)
APM9930/C
Min.
Typ.
0.6
Symbol
Parameter
Test Condition
Max.
1.3
Unit
I
SD
=5A , V
GS
=0V
N-Ch
V
SD
a
Diode Forward Voltage
I
SD
=-2A , V
GS
=0V
P-Ch
-0.6
-1.3
V
Dynamic
a
N-Ch
14
22
Q
g
Total Gate Charge
P-Ch
6.8
16
N-Ch
5
Q
gs
Gate-Source Charge
P-Ch
3.6
N-Ch
2.8
Q
gd
Gate-Drain Charge
N-Channel
V
DS
=10V , I
DS
= 6A
V
GS
=4.5V
P-Channel
V
DS
=-10V , I
DS
=-1A
V
GS
=-4.5V
P-Ch
1.08
nC
N-Ch
6
12
t
d(ON)
Turn-on Delay Time
P-Ch
21
42
N-Ch
5
10
T
r
Turn-on Rise Time
P-Ch
45
85
N-Ch
16
40
t
d(OFF)
Turn-off Delay Time
P-Ch
36
80
N-Ch
5
20
T
f
Turn-off Fall Time
N-Channel
V
DD
=10V , I
DS
=1A ,
V
GEN
=4.5V , R
G
=10
P-Channel
V
DD
=-10V , I
DS
=-1A ,
V
GEN
=-4.5V , R
G
=10
P-Ch
20
40
ns
N-Ch
1225
C
iss
Input Capacitance
P-Ch
495
N-Ch
330
C
oss
Output Capacitance
P-Ch
130
N-Ch
220
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
P-Ch
60
pF
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