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參數(shù)資料
| 型號： | APM9424 |
| 廠商： | Anpec Electronics Corporation |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N溝道增強型MOS管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 130K |
| 代理商： | APM9424 |
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
APM9424
www.anpec.com.tw
2
Symbol
P
D
Parameter
Rating
2.5
Unit
T
A
= 25
°
C
T
A
= 100
°
C
Maximum Power Dissipation
1.0
W
T
J
Maximum Junction Temperature
Storage Temperature Range
150
T
STG
-55 to 150
°
C
R
θ
JA
*
Thermal Resistance - Junction to Ambient
50
°C/W
* Surface Mounted on FR4 Board, t
≤
10 sec.
Electrical Characteristics
(T
A
=25°C unless otherwise noted)
Absolute Maximum Ratings ( Cont.)
(T
A
= 25
°
C unless otherwise noted)
APM9424
Typ.
Symbol
Parameter
Test Condition
Min.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
V
GS
=0V , I
DS
=250
μ
A
20
V
I
DSS
V
DS
=16V , V
GS
=0V
1
μ
A
V
GS(th)
I
GSS
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=
±
16V , V
DS
=0V
V
GS
=4.5V , I
DS
=10A
V
GS
=2.5V , I
DS
=8A
I
SD
=2.3A , V
GS
=0V
0.7
0.9
1.5
±
100
13
V
nA
10
R
DS(ON)
a
15
0.8
20
1.3
m
V
SD
a
Diode Forward Voltage
V
Dynamic
b
Q
g
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer
28.2
5.2
7.6
35
80
115
40
2400
720
480
37
V
DS
=10V , V
GS
=4.5V ,
I
DS
=10A
nC
70
160
235
85
V
DD
=15V , I
DS
=10A ,
V
GEN
=4.5V , R
G
=6
ns
V
GS
=0V , V
DS
=15V
Frequency=1.0MHz
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width
≤
500
μ
s, duty cycle
≤
2%
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