參數(shù)資料
型號(hào): APM7318
廠商: Anpec Electronics Corporation
英文描述: Dual N-Channel Enhancement Mode MOSFET
中文描述: 雙N溝道增強(qiáng)型MOS管
文件頁數(shù): 2/9頁
文件大?。?/td> 560K
代理商: APM7318
Copyright
ANPEC Electronics Corp.
Rev. A.3 - May., 2003
www.anpec.com.tw
2
APM7318
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
APM7318
Typ.
Symbol
Parameter
Test Condition
Min.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
V
GS
=0V , I
DS
=250
μ
A
20
V
I
DSS
V
DS
=18V , V
GS
=0V
1
μ
A
V
GS(th)
I
GSS
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=
±
16V , V
DS
=0V
V
GS
=4.5V , I
DS
=8A
V
GS
=2.5V , I
DS
=2A
I
SD
=4A , V
GS
=0V
0.7
0.9
1.5
±
100
20
40
1.3
V
nA
15
30
0.7
R
DS(ON)
a
Resistance
Diode Forward Voltage
m
V
SD
a
V
Dynamic
b
Q
g
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Notes
a
: Pulse test ; pulse width
300
μ
s, duty cycle
2
%
b
: Guaranteed by design, not subject to production testing
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
14
5
2.8
9
14
30
16
1220
335
215
17
V
DS
=10V , I
DS
= 6A
V
GS
=4.5V
nC
15
20
43
24
V
DD
=10V , I
DS
=2A ,
V
GEN
=4.5V , R
G
=0.2
ns
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
pF
Absolute Maximum Ratings
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
V
GSS
I
D
I
DM
P
D
Drain-Source Voltage
20
Gate-Source Voltage
±16
V
*
Maximum Drain Current – Continuous
8
Maximum Drain Current – Pulsed
24
A
T
A
=25
°
C
2.5
W
Maximum Power Dissipation
T
A
=100
°
C
1.0
W
T
J
Maximum Junction Temperature
150
°
C
T
STG
Storage Temperature Range
-55 to 150
°
C
R
θ
jA
Thermal Resistance – Junction to Ambient
50
°
C/W
* Surface Mounted on FR4 Board, t
10 sec.
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