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參數(shù)資料
| 型號(hào)： | APM7317KCTU |
| 廠商： | Anpec Electronics Corporation |
| 英文描述： | Dual N-Channel Enhancement Mode MOSFET |
| 中文描述： | 雙N溝道增強(qiáng)型MOS管 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | APM7317KCTU |
Copyright
ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw
2
APM7313
APM7313
Typ.
Symbol
Parameter
Test Condition
Min.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
V
GS
=0V , I
DS
=250
μ
A
30
V
I
DSS
V
DS
=24V , V
GS
=0V
1
μ
A
V
GS(th)
I
GSS
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=
±
20V , V
DS
=0V
V
GS
=10V , I
DS
=3.5A
V
GS
=4.5V , I
DS
=2A
I
SD
=2A , V
GS
=0V
1
1.5
2
V
nA
±
100
28
42
1.3
21
27
0.7
R
DS(ON)
a
m
V
SD
a
V
Dynamic
b
Q
g
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
5.8
3.8
11
17
37
20
1200
210
95
36
V
DS
=15V , I
DS
= 10A
V
GS
=10V
nC
22
33
68
38
V
DD
=15V , I
DS
=2A ,
V
GEN
=10V , R
G
=6
ns
V
GS
=0V
V
DS
=25V
Frequency=1.0MHz
pF
Symbol
I
D
I
DM
P
D
Parameter
Rating
6
Unit
*
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
24
A
T
A
=25
°
C
2.5
W
Maximum Power Dissipation
T
A
=100
°
C
1.0
W
T
J
Maximum Junction Temperature
150
°
C
T
STG
R
θ
jA
Storage Temperature Range
-55 to 150
°
C
Thermal Resistance – Junction to Ambient
50
°
C/W
* Surface Mounted on FR4 Board, t
≤
10 sec.
Notes
a
: Pulse test ; pulse width
≤
300
μ
s, duty cycle
≤
2
%
b
: Guaranteed by design, not subject to production testing
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Absolute Maximum Ratings ( Cont.)
(T
A
= 25
°
C unless otherwise noted)
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