參數(shù)資料
型號: APM6928
廠商: Anpec Electronics Corporation
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N溝道增強型MOS管
文件頁數(shù): 2/9頁
文件大?。?/td> 153K
代理商: APM6928
Copyright
ANPEC Electronics Corp.
Rev. A.1 - J an., 2002
www.anpec.com.tw
2
APM6928
Notes
a
: Pulse test ; pulse width
300
μ
s, duty cycle
2
%
b
: Guaranteed by design, not subject to production testing
Absolute Maximum Ratings Cont.
(T
A
= 25
°
C unless otherwise noted)
Symbol
P
D
Parameter
Rating
1.0
Unit
W
Maximum Power Dissipation
T
A
=25
°
C
T
J
Maximum Junction Temperature
150
°
C
T
STG
R
θ
jA
Storage Temperature Range
-55 to 150
°
C
Thermal Resistance – Junction to Ambient
125
°
C/W
APM6928
Typ.
Symbol
Parameter
Test Condition
Min.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
μ
A
30
V
V
DS
=24V , V
GS
=0V
V
DS
=24V, V
GS
=0V, T
j
= 55
°
C
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=
±
20V , V
DS
=0V
V
GS
=10V , I
DS
=4A
V
GS
=4.5V , I
DS
=3.4A
I
SD
=1.25A , V
GS
=0V
1
5
3
I
DSS
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
μ
A
V
GS(th)
I
GSS
1
V
nA
±
100
30
45
1.2
20
35
0.73
R
DS(ON)
a
m
V
SD
a
V
Dynamic
b
Q
g
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
15
5.8
3.8
11
17
37
20
1150
230
100
20
V
DS
=15V , I
DS
= 10A
V
GS
=5V ,
nC
18
26
54
30
V
DD
=15V , I
DS
=2A ,
V
GEN
=10V , R
G
=6
ns
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
pF
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
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