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參數(shù)資料
| 型號： | APM4835KC-TU |
| 廠商： | Anpec Electronics Corporation |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P溝道增強型MOS管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 126K |
| 代理商： | APM4835KC-TU |
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
APM4835
www.anpec.com.tw
2
Symbol
P
D
Parameter
Rating
2.5
Unit
W
T
A
= 25
°
C
T
A
= 100
°
C
Maximum Power Dissipation
1
T
J
Maximum Junction Temperature
Storage Temperature Range
150
T
STG
R
θ
JA
-55 to 150
°
C
Thermal Resistance - Junction to Ambient
50
°C/W
Electrical Characteristics
(T
A
=25°C unless otherwise noted)
Absolute Maximum Ratings ( Cont.)
(T
A
= 25
°
C unless otherwise noted)
APM4835
Min.
Typ
a
.
Max.
Symbol
Parameter
Test Condition
Unit
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
= -250
μ
A
V
DS
= -30V, V
GS
=0V
V
DS
=V
GS
, I
D
= -250
μ
A
V
GS
=
±
25V , V
DS
=0V
-30
V
Zero Gate Voltage Drain Current
-1
μ
A
V
nA
Gate Threshold Voltage
Gate Leakage Current
-1
-1.5
-2
±
100
V
GS
= -10V, I
D
= -8A
16
19
R
DS(ON)
Drain-Source On-state Resistance
b
V
GS
= -4.5V, I
D
= -5A
I
SD
= -3A, V
GS
=0V
24
30
m
V
SD
Diode Forward Voltage
b
-0.7
-1.3
V
Dynamic
a
Q
g
Q
gs
Q
gd
t
d(ON)
t
r
t
d(OFF)
t
f
C
iss
C
oss
C
rss
Total Gate Charge
48
60
Gate-Source Charge
10
Gate-Drain Charge
V
DS
= -15V, V
GS
= -10V,
I
D
= -4.6A
9
nC
Turn-on Delay Time
16
30
Turn-on Rise Time
17
30
Turn-off Delay Time
75
120
Turn-off Fall Time
Input Capacitance
V
DD
= -25V, I
D
= -2A,
V
GEN
= -10V, R
G
=6
R
L
=12.5
31
80
ns
3800
Output Capacitance
590
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-25V
Frequency = 1.0MHZ
250
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width
≤
500
μ
s, duty cycle
≤
2%
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