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參數(shù)資料
| 型號： | APM4548KC-TUL |
| 廠商： | Anpec Electronics Corporation |
| 英文描述： | Dual Enhancement Mode MOSFET (N-and P-Channel) |
| 中文描述： | 雙增強型MOS管（N溝道和P溝道） |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 251K |
| 代理商： | APM4548KC-TUL |
Copyright
ANPEC Electronics Corp.
Rev. B.1 - S ep., 2005
www.anpec.com.tw
3
APM4548K
Electrical Characteristics ( Cont.)
(T
A
= 25
°
C unless otherwise noted)
APM4548K
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Diode Characteristics
I
SD
=2A, V
GS
=0V
I
SD
=-2.3A, V
GS
=0V
N-Ch
0.8
1.3
V
SD
a
Diode Forward Voltage
P-Ch
-0.8
-1.3
V
Dynamic Characteristics
b
N-Ch
2.5
R
G
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
P-Ch
11
N-Ch
960
C
iss
Input Capacitance
P-Ch
980
N-Ch
180
C
oss
Output Capacitance
P-Ch
155
N-Ch
100
C
rss
Reverse Transfer
Capacitance
N-Channel
V
GS
=0V,
V
=15V,
Frequency=1.0MHz
P-Channel
V
GS
=0V,
V
DS
=-15V,
Frequency=1.0MHz
P-Ch
120
pF
N-Ch
7
14
t
d(ON)
Turn-on Delay Time
P-Ch
7
14
N-Ch
9
17
T
r
Turn-on Rise Time
P-Ch
10
20
N-Ch
34
62
t
d(OFF)
Turn-off Delay Time
P-Ch
38
70
N-Ch
12
23
T
f
Turn-off Fall Time
N-Channel
V
DD
=15V, R
L
=15
,
I
DS
=1A, V
GEN
=10V,
R
G
=6
P-Channel
V
DD
=-15V, R
L
=15
,
I
DS
=-1A, V
GEN
=-10V,
R
G
=6
P-Ch
14
26
ns
N-Ch
5
Q
rr
Reverse Recovery Charge
N-Channel
I
=7A, dI
SD
/dt =100A/
μ
s
P-Channel
I
SD
=-6A, dI
SD
/dt =100A/
μ
s
P-Ch
3
nC
Gate Charge Characteristics
b
N-Ch
19
25
Q
g
Total Gate Charge
P-Ch
24
30
N-Ch
2
Q
gs
Gate-Source Charge
P-Ch
2
N-Ch
3.6
Q
gd
Gate-Drain Charge
N-Channel
V
DS
=15V, V
GS
=10V,
I
DS
=7A
P-Channel
V
DS
=-15V, V
GS
=-10V,
I
DS
=-6A
P-Ch
3.7
nC
Notes
a : Pulse test ; pulse width
≤
300
μ
s, duty cycle
≤
2%.
b : Guaranteed by design, not subject to production testing.
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