參數(shù)資料
型號: APM4542KC-TRL
廠商: Anpec Electronics Corporation
英文描述: Dual Enhancement Mode MOSFET (N-and P-Channel)
中文描述: 雙增強型MOS管(N溝道和P溝道)
文件頁數(shù): 3/13頁
文件大?。?/td> 281K
代理商: APM4542KC-TRL
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003
www.anpec.com.tw
3
APM4542
Electrical Characteristics ( Cont.)
(T
A
= 25
°
C unless otherwise noted)
APM4542
Min. Typ. Max.
Symbol
Parameter
Test Condition
Unit
Dynamic
b
N-Ch
19
28
Q
g
Total Gate Charge
P-Ch
28
36
N-Ch
1.6
Q
gs
Gate-Source Charge
P-Ch
5
N-Ch
3.6
Q
gd
Gate-Drain Charge
N-Channel
V
DS
=15V , I
DS
= 7A
V
GS
=10V
P-Channel
V
DS
=-15V , I
DS
=-5.5A
V
GS
=-10V
P-Ch
4
nC
N-Ch
11
20
t
d(ON)
Turn-on Delay Time
P-Ch
12
24
N-Ch
17
28
T
r
Turn-on Rise Time
P-Ch
15
29
N-Ch
36
62
t
d(OFF)
Turn-off Delay Time
P-Ch
35
60
N-Ch
20
36
T
f
Turn-off Fall Time
N-Channel
V
DD
=15V , I
DS
=2A ,
V
GEN
=10V , R
G
=6
,
R
L
=7.5
P-Channel
V
DD
=-15V , I
DS
=-2A ,
V
GEN
=-10V , R
G
=6
,
R
L
=7.5
P-Ch
15
30
ns
N-Ch
835
C
iss
Input Capacitance
P-Ch
950
N-Ch
145
C
oss
Output Capacitance
P-Ch
160
N-Ch
15
C
rss
Reverse Transfer Capacitance
N-Channel
V
GS
=0V, V
DS
=25V
Frequency=1.0MHz
P-Channel
V
GS
=0V, V
DS
=-25V
Frequency=1.0MHz
P-Ch
110
pF
Notes
b
: Guaranteed by design, not subject to production testing
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