參數(shù)資料
型號(hào): APM4542K
廠商: Anpec Electronics Corporation
英文描述: Dual Enhancement Mode MOSFET (N-and P-Channel)
中文描述: 雙增強(qiáng)型MOS管(N溝道和P溝道)
文件頁數(shù): 3/13頁
文件大小: 164K
代理商: APM4542K
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(T
A
= 25
°
C unless otherwise noted)
APM4542K
Symbol
Parameter
Test Condition
Min.
Typ. Max.
Unit
Diode Characteristics
I
SD
=2A, V
GS
=0V
I
SD
=-2.3A, V
GS
=0V
N-Ch
0.7
1.3
V
SD
a
Diode Forward Voltage
P-Ch
-1.7
-1.3
V
Dynamic Characteristics
b
N-Ch
2
R
G
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
P-Ch
11
N-Ch
835
C
iss
Input Capacitance
P-Ch
950
N-Ch
145
C
oss
Output Capacitance
P-Ch
160
N-Ch
15
C
rss
Reverse Transfer
Capacitance
N-Channel
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
P-Channel
V
GS
=0V,
V
DS
=-25V,
P-Ch
110
pF
N-Ch
11
20
t
d(ON)
Turn-on Delay Time
P-Ch
12
24
N-Ch
17
28
T
r
Turn-on Rise Time
P-Ch
15
29
N-Ch
36
62
t
d(OFF)
Turn-off Delay Time
P-Ch
35
60
N-Ch
20
36
T
f
Turn-off Fall Time
N-Channel
V
DD
=15V, R
L
=15
,
I
DS
=1A, V
GEN
=10V,
R
G
=6
P-Channel
V
DD
=-15V, R
L
=15
,
I
DS
=-1A, V
GEN
=-10V,
R
G
=6
P-Ch
15
30
ns
Gate Charge Characteristics
b
N-Ch
19
25
Q
g
Total Gate Charge
P-Ch
33
43
N-Ch
1.6
Q
gs
Gate-Source Charge
P-Ch
5
N-Ch
3.6
Q
gd
Gate-Drain Charge
N-Channel
V
DS
=15V, V
GS
=10V,
I
DS
=7A
P-Channel
V
DS
=-15V, V
GS
=-10V,
I
DS
=-5.5A
P-Ch
4
nC
Notes
:
:
a : Pulse test ; pulse width
300
μ
s, duty cycle
2%.
b : Guaranteed by design, not subject to production testing.
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