參數(shù)資料
型號: APM4538KC-TRL
廠商: Anpec Electronics Corporation
英文描述: Dual Enhancement Mode MOSFET (N-and P-Channel)
中文描述: 雙增強型MOS管(N溝道和P溝道)
文件頁數(shù): 3/13頁
文件大小: 163K
代理商: APM4538KC-TRL
!
"#!$!%!&'(()
.
"#$%#&'
(T
A
= 25
°
C unless otherwise noted)
APM4538K
Symbol
Parameter
Test Condition
Min.
Typ. Max.
Unit
Diode Characteristics
I
SD
=1.7A, V
GS
=0V
I
SD
=-1.7A, V
GS
=0V
N-Ch
0.8
1.3
V
SD
a
Diode Forward Voltage
P-Ch
-0.8
-1.3
V
Dynamic Characteristics
b
N-Ch
2.8
R
G
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
P-Ch
11
N-Ch
450
C
iss
Input Capacitance
P-Ch
770
N-Ch
65
C
oss
Output Capacitance
P-Ch
120
N-Ch
25
C
rss
Reverse Transfer
Capacitance
N-Channel
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
P-Channel
V
GS
=0V,
V
DS
=-25V,
P-Ch
80
pF
N-Ch
10
15
t
d(ON)
Turn-on Delay Time
P-Ch
10
20
N-Ch
8
20
T
r
Turn-on Rise Time
P-Ch
15
30
N-Ch
20
28
t
d(OFF)
Turn-off Delay Time
P-Ch
25
50
N-Ch
5
15
T
f
Turn-off Fall Time
N-Channel
V
DD
=15V, R
L
=15
,
I
DS
=1A, V
GEN
=10V,
R
G
=6
P-Channel
V
DD
=-15V, R
L
=15
,
I
DS
=-1A, V
GEN
=-10V,
R
G
=6
P-Ch
15
30
ns
Gate Charge Characteristics
b
N-Ch
15
21
Q
g
Total Gate Charge
P-Ch
26
35
N-Ch
4.5
Q
gs
Gate-Source Charge
P-Ch
5.1
N-Ch
2.1
Q
gd
Gate-Drain Charge
N-Channel
V
DS
=15V, V
GS
=10V,
I
DS
=5A
P-Channel
V
DS
=-15V, V
GS
=-10V,
I
DS
=-4A
P-Ch
3.3
nC
Notes:
a : Pulse test ; pulse width
300
μ
s, duty cycle
2%.
b : Guaranteed by design, not subject to production testing.
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