參數(shù)資料
型號: APM4532KC-TUL
廠商: Anpec Electronics Corporation
英文描述: Dual Enhancement Mode MOSFET (N-and P-Channel)
中文描述: 雙增強型MOS管(N溝道和P溝道)
文件頁數(shù): 3/13頁
文件大?。?/td> 170K
代理商: APM4532KC-TUL
!
"#!$!%!&'(()
.
APM4532K
Symbol
Parameter
Test Condition
Min.
Typ. Max.
Unit
Diode Characteristics
I
SD
=1.7A, V
GS
=0V
I
SD
=-1.7A, V
GS
=0V
N-Ch
0.7
1.3
V
SD
a
Diode Forward Voltage
P-Ch
-0.7
-1.3
V
Dynamic Characteristics
b
N-Ch
3
R
G
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
P-Ch
13
N-Ch
440
C
iss
Input Capacitance
P-Ch
530
N-Ch
90
C
oss
Output Capacitance
P-Ch
90
N-Ch
40
C
rss
Reverse Transfer
Capacitance
N-Channel
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
P-Channel
V
GS
=0V,
V
DS
=-25V,
P-Ch
40
pF
N-Ch
10
15
t
d(ON)
Turn-on Delay Time
P-Ch
8
15
N-Ch
8
20
T
r
Turn-on Rise Time
P-Ch
7
20
N-Ch
20
28
t
d(OFF)
Turn-off Delay Time
P-Ch
15
28
N-Ch
5
15
T
f
Turn-off Fall Time
N-Channel
V
DD
=15V, R
L
=15
,
I
DS
=1A, V
GEN
=10V,
R
G
=6
P-Channel
V
DD
=-15V, R
L
=15
,
I
DS
=-1A, V
GEN
=-10V,
R
G
=6
P-Ch
7
18
ns
Gate Charge Characteristics
b
N-Ch
12.6
17
Q
g
Total Gate Charge
P-Ch
8
12
N-Ch
4.7
Q
gs
Gate-Source Charge
P-Ch
2
N-Ch
1.1
Q
gd
Gate-Drain Charge
N-Channel
V
DS
=15V, V
GS
=10V,
I
DS
=5A
P-Channel
V
DS
=-15V, V
GS
=-10V,
I
DS
=-3.5A
P-Ch
1
nC
Notes:
a : Pulse test ; pulse width
300
μ
s, duty cycle
2%.
b : Guaranteed by design, not subject to production testing.
"#$%#&'
(T
A
= 25
°
C unless otherwise noted)
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