參數(shù)資料
型號: APM4472KC-TRG
廠商: ANPEC ELECTRONICS CORP
元件分類: JFETs
英文描述: 12 A, 40 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝: GREEN, SOP-8
文件頁數(shù): 10/10頁
文件大?。?/td> 104K
代理商: APM4472KC-TRG
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Apr., 2008
APM4472K
9
Test item
Method
Description
SOLDERABILITY
MIL-STD-883D-2003
245
°C, 5 sec
HOLT
MIL-STD-883D-1005.7
1000 Hrs Bias @125
°C
PCT
JESD-22-B, A102
168 Hrs, 100
%RH, 121°C
TST
MIL-STD-883D-1011.9
-65
°C~150°C, 200 Cycles
Reflow Condition (IR/Convection or VPR Reflow)
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate
(TL to TP)
3
°C/second max.
3
°C/second max.
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100
°C
150
°C
60-120 seconds
150
°C
200
°C
60-180 seconds
Time maintained above:
- Temperature (TL)
- Time (tL)
183
°C
60-150 seconds
217
°C
60-150 seconds
Peak/Classification Temperature (Tp)
See table 1
See table 2
Time within 5
°C of actual
Peak Temperature (tp)
10-30 seconds
20-40 seconds
Ramp-down Rate
6
°C/second max.
6
°C/second max.
Time 25
°C to Peak Temperature
6 minutes max.
8 minutes max.
Note: All temperatures refer to topside of the package. Measured on the body surface.
Reliability Test Program
t 25 C to Peak
tp
Ramp-up
t
L
Ramp-down
ts
Preheat
Tsmax
Tsmin
T
L
T
P
25
T
e
m
p
e
ra
tu
re
Time
Critical Zone
T
L to TP
°
相關PDF資料
PDF描述
APM4472KC-TRL 12 A, 40 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
APT1001R1AVR 9 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
APT1001R1BNR-GULLWING 10.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT1001RBNR-GULLWING 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT1001R1BNR-BUTT 10.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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