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參數(shù)資料
| 型號： | APM4435KC-TUL |
| 廠商： | Anpec Electronics Corporation |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 195K |
| 代理商： | APM4435KC-TUL |
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Jun., 2006
www.anpec.com.tw
2
APM4435K
Absolute Maximum R atings
(T
A
= 25
°
C unless otherwise noted)
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
Rating
-30
±25
Unit
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
V
-8
-30
-3
150
V
GS
=-10V
A
A
Maximum Junction Temperature
Storage Temperature Range
-55 to 150
2
0.8
°C
T
A
=25°C
T
A
=100°C
P
D
*
Maximum Power Dissipation
W
R
θ
JA
*
Thermal Resistance-Junction to Ambient
62.5
°C/W
Note:
*Surface Mounted on 1in
2
pad area, t
≤
10sec.
APM4435K
Min.
Typ.
Symbol
Parameter
Test Condition
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=-250
μ
A
V
DS
=-24V, V
GS
=0V
-30
-1
V
-1
-30
-2
±100
20
30
-1.3
I
DSS
Zero Gate Voltage Drain Current
T
A
=25°C
μ
A
V
GS(th)
I
GSS
Gate Threshold Voltage
Gate Leakage Current
V
DS
=V
GS
, I
DS
=-250
μ
A
V
GS
=±25V, V
DS
=0V
V
GS
=-10V, I
DS
=-8A
V
GS
=-4.5V, I
DS
=-5A
I
SD
=-3A, V
GS
=0V
-1.5
16
24
-0.8
V
nA
R
DS(ON)
a
Drain-Source On-state Resistance
m
V
SD
a
Diode Forward Voltage
V
Dynamic Characteristics
b
R
G
Gate Resistance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
d(ON)
Turn-on Delay Time
T
r
Turn-on Rise Time
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
V
GS
=0V,V
DS
=0V,F=1MHz
10
3200
560
250
16
17
75
31
V
GS
=0V,
V
DS
=-25V,
Frequency=1.0MHz
pF
30
32
136
57
V
DD
=-15V, R
L
=15
,
I
DS
=-1A, V
GEN
=-10V,
R
G
=6
,
ns
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