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參數(shù)資料
| 型號(hào)： | APM4416KC-TRL |
| 廠商： | Anpec Electronics Corporation |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N溝道增強(qiáng)型MOS管 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大小： | 128K |
| 代理商： | APM4416KC-TRL |
!"#$$%
#
(T
A
= 25
°
C unless otherwise noted)
!"#
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
Drain-Source Voltage
30
Gate-Source Voltage
±20
V
Continuous Drain Current
4
300
μ
s Pulsed Drain Current
Diode Continuous Forward Current
V
GS
=10V
20
A
2
A
T
J
T
STG
Maximum Junction Temperature
150
Storage Temperature Range
-55 to 150
°
C
T
A
=25
°
C
T
A
=100
°
C
2
0.8
P
D
*
Maximum Power Dissipation
W
R
θ
JA
*
Thermal Resistance-Junction to Ambient
62.5
°
C/W
Note:
*Surface Mounted on 1in
2
pad area, t
≤
10sec.
APM4416K
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=250
μ
A
V
DS
=24V, V
GS
=0V
30
V
1
I
DSS
Zero Gate Voltage Drain Current
T
J
=85
°
C
30
μ
A
V
GS(th)
I
GSS
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=4A
V
GS
=4.5V, I
DS
=2A
I
SD
=2A, V
GS
=0V
1
1.5
2
V
Gate Leakage Current
±100
nA
15
18
R
DS(ON)
a
Drain-Source On-state Resistance
22
30
m
V
SD
a
Diode Forward Voltage
0.7
1.3
V
Gate Charge Characteristics
b
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
18
24
3
V
DS
=15V, V
GS
=10V,
I
DS
=4A
2
nC
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|---|---|
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| APM4420K | 制造商:ANPEC 制造商全稱:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET |
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