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參數(shù)資料
| 型號： | APM3055LUC-TRG |
| 廠商： | ANPEC ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 113K |
| 代理商： | APM3055LUC-TRG |
Copyright
ANPEC Electronics Corp.
Rev. B.4 - Mar., 2008
APM3055LU
3
Electrical Characteristics (T
A = 25°C unless otherwise noted)
APM3055LU
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250
A
30
V
VDS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
TJ=85°C
30
A
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=250
A
1
1.5
2
V
IGSS
Gate Leakage Current
VGS=±20V, VDS=0V
±100
nA
VGS=10V, IDS=12A
75
100
RDS(ON)
a
Drain-Source On-state Resistance
VGS=4.5V, IDS=6A
100
200
m
Diode Characteristics
VSD
a
Diode Forward Voltage
ISD=6A, VGS=0V
0.7
1.3
V
Dynamic Characteristics
b
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
2.6
Ciss
Input Capacitance
230
Coss
Output Capacitance
60
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
30
pF
td(ON)
Turn-on Delay Time
4
7
Tr
Turn-on Rise Time
11
22
td(OFF)
Turn-off Delay Time
15
21
Tf
Turn-off Fall Time
VDD=15V, RL=15
,
IDS=1A, VGEN=10V,
RG=6
3
5
ns
Gate Charge Characteristics
b
Qg
Total Gate Charge
6.2
8.5
Qgs
Gate-Source Charge
1.2
Qgd
Gate-Drain Charge
VDS=15V, VGS=10V,
IDS=12A
1.2
nC
Notes:
a : Pulse test ; pulse width
≤300
s, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
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