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參數資料
| 型號： | APM2506NUC-TRL |
| 廠商： | Anpec Electronics Corporation |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N溝道增強型MOS管 |
| 文件頁數： | 5/11頁 |
| 文件大?。?/td> | 183K |
| 代理商： | APM2506NUC-TRL |
CopyrightANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
3
www.anpec.com.tw
APM2506NU
Electrical Characteristics (T
A=25°C)
APM2506NU
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Avalanche Ratings
EAS
Drain-Source Avalanche Energy
ID=45A, VDD=15V
100
mJ
Static
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=250A
25
V
IDSS
Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
1
A
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=250A
1
1.5
2
V
IGSS
Gate Leakage Current
VGS=±20V, VDS=0V
±100
nA
VGS=10V, IDS=40A
5
6
RDS(ON)
a
Drain-Source On-state Resistance
VGS=4.5V, IDS=20A
7
10
m
Diode
VSD
a
Diode Forward Voltage
ISD=20A , VGS=0V
0.7
1.3
V
IS
Diode continuous forward current
TA=25°C
40
A
Dynamic
b
Ciss
Input Capacitance
3000
pF
Coss
Output Capacitance
670
pF
Crss
Reverse Transfer Capacitance
VGS=0V
VDS=15V
Frequency=1.0MHz
360
pF
td(ON)
Turn-on Delay Time
13
20
ns
Tr
Turn-on Rise Time
9
15
ns
td(OFF)
Turn-off Delay Time
43
66
ns
Tf
Turn-off Fall Time
VDD=15V, RL=15
IDS=1A, VGEN=10V,
RG=6
14
28
ns
Gate Charge
b
Qg
Total Gate Charge
32
42
nC
Qgs
Gate-Source Charge
6.6
nC
Qgd
Gate-Drain Charge
VDS=15V, VGS=4.5V,
IDS=20A
12.4
nC
Notes：
a : Pulse test ; pulse width
≤300
s, duty cycle≤2%
b : Guaranteed by design, not subject to production testing
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