參數(shù)資料
型號(hào): APM2506NU
廠商: Anpec Electronics Corporation
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N溝道增強(qiáng)型MOS管
文件頁(yè)數(shù): 6/11頁(yè)
文件大?。?/td> 183K
代理商: APM2506NU
CopyrightANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
4
www.anpec.com.tw
APM2506NU
Typical Characteristics
P
to
t-
P
o
w
e
r(W
)
Power Dissipation
Tj - Junction Temperature (°C)
Drain Current
Tj - Junction Temperature (°C)
I D
-D
rai
n
C
u
rr
en
t(A
)
Safe Operation Area
VDS - Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
Normalized
Eff
ective
Tr
an
sient
Thermal Transient Impedance
I D
-
Dr
ai
n
Cu
rr
e
n
t(
A
)
0
20
40
60
80 100 120 140 160 180
0
10
20
30
40
50
60
0
20
40
60
80 100 120 140 160 180
0
10
20
30
40
50
60
70
1E-4
1E-3
0.01
0.1
1
10
100
1E-3
0.01
0.1
1
Mounted on 1in
2 pad
R
θJA :50
oC/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
0.1
1
10
70
0.1
1
10
100
300
T
C
=25
OC
100s
300s
1ms
10ms
DC
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