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參數(shù)資料
| 型號(hào)： | APM2313A |
| 廠商： | Anpec Electronics Corporation |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 153K |
| 代理商： | APM2313A |
P-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain
the latest version of relevant information to verify before placing orders.
APM2313
Ordering and Marking Information
Features
Applications
Absolute Maximum Ratings (T
A = 25°C unless otherwise noted)
-20V/-1.8A , R
DS(ON)=108m(typ.) @ VGS=-4.5V
R
DS(ON)=135m(typ.) @ VGS=-2.5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SOT-23 Package
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
A P M 23 13
H andling C ode
Te m p . R a ng e
P a ckage C o de
A : S O T -2 3
O perating Junction T e m p . R ange
C : -5 5 to 1 5 0 C
H andling C ode
T R : T ape & R eel
°
A P M 2313 A :
M 13X
X - Da te Co d e
Symbol
Parameter
Rating
Unit
VDSS
Drain-Source Voltage
-20
V
GSS
Gate-Source Voltage
±10
V
I
D
*
Maximum Drain Current – Continuous
-1.8
I
DM
Maximum Drain Current – Pulsed
-7
A
* Surface Mounted on FR4 Board, t
≤ 10 sec.
Pin Description
G
D
S
Top View of SOT-23
P-Channel MOSFET
G
S
D
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