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參數(shù)資料
| 型號： | APL502L |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 58 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 139K |
| 代理商： | APL502L |
V
DS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
T
J = +125°C
T
J = +25°C
T
J = -55°C
V
GS=10V
V
GS=20V
NORMALIZED TO
V
GS = 10V @ 29A
050-5896
Rev
E
2-2010
Typical Performance Curves
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
0
2
4
6
8
10
0
20
40
60
80
100
120
25
50
75
100
125
150
-50
0
50
100
150
1.30
1.20
1.10
1.00
0.90
0.80
0.70
1.15
1.10
1.05
1.00
0.95
0.90
80
60
40
20
0
60
50
40
30
20
10
0
APL502B2_L(G)
120
100
80
60
40
20
0
120
100
80
60
40
20
0
50
100
150
200
250
0
5
10
15
20
25
30
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS
7 V
6 V
6.5 V
V
GS=10V, 15 V
5.5 V
7 V
6 V
6.5 V
5.5 V
7.5 V
V
GS=10, 15V
7.5 V
8 V
R
DS
(ON),
DRAIN-T
O-SOURCE
ON
RESIST
ANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOL
TAGE
BV
DSS
,DRAIN-T
O-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-T
O-SOURCE
ON
RESIST
ANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOL
TAGE
(NORMALIZED)
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
I
D = 29A
V
GS = 12V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
2.5
2.0
1.5
1.0
0.5
0.0
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