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參數(shù)資料
| 型號(hào)： | APL1001J |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 1000 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 74K |
| 代理商： | APL1001J |
AP4424GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
6
8
10
12
14
16
35
79
11
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =10 A
T A =25 ℃
0
30
60
90
120
150
180
210
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
10V
7.0V
5.0V
4.5V
V G =4.0V
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A = 150
o C
10V
7.0V
5.0V
4.5V
V G =4.0V
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =1 3 A
V G =10V
1.00
1.50
2.00
2.50
3.00
-50
0
50
100
150
T j , Junction Temperature (
o C)
V
GS(t
h)
(V
)
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
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