參數(shù)資料
型號(hào)： APE9105TN
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： 磁阻傳感器
英文描述： MAGNETIC FIELD SENSOR-HALL EFFECT, 1-4mT, RECTANGULAR, SURFACE MOUNT
封裝： TSOT-23, 3 PIN
文件頁數(shù)： 2/6頁
文件大小： 109K
代理商： APE9105TN
Advanced Power
Electronics Corp.
APE9105
ABSOLUTE MAXIMUM RATINGS (at T
A=25°C)
Supply Voltage (VDD) --------------------------------------
-0.3 to 6V
Output Voltage (VOUT) ------------------------------------- -0.3 to 6V
Output Current (IOUT) --------------------------------------- 2mA
Power Dissipation(PD) ------------------------------------- 400mW
Storage Temperature Range(TST) ---------------------- -65°C To 150°C
Operating Temperature Range(TOP) ------------------- -40°C To 85°C
Junction Temperature(TJ) -------------------------------- 125°C
180
oC/W
250
oC/W
Note. RthJA is measured with the PCB copper area of approximately 1 in
2(Multi-layer).
ELECTRICAL SPECIFICATIONS
(VDD=2.75V, TA=25℃, unless otherwise specified)
Parameter
SYM
TEST CONDITION
MIN
TYP
MAX
UNITS
Supply Voltage
VDD
2.4
-
5.5
V
Awake state
-
2
4
mA
Sleep state
-
7
12
uA
Average
-
9
16
uA
Output Saturation Voltage
VOSAT
IOUT=1mA
-
0.1
0.3
V
Output Leakage Current
IO-LEAK
VOUT=5.5V, B<Brp
-
0.01
1
uA
Output Wake-Up Time
Twake-up
-
70
120
us
Period
TPeriod
-
70
120
ms
Duty Cycle
-
0.1
-
%
MAGNETIC CHARACTERISTICS
(VDD=2.75V, TA=25℃, unless otherwise specified)
Characteristics
Symbol
Conditions
Min
Typ
Max
UNITS
BOPS
20
30
40
BOPN
-40
-30
-20
BRPS
10
20
-
BRPN
-
-20
-10
Hysteresis
BHys
-10
-
2
Thermal Resistance from Junction to Case(RthJC)
Input Current
IDD
Thermal Resistance from Junction to Ambient(RthJA)
Operating Points
Release Points
Gauss
N
0
Bopn Brpn
B
Vout
Brps Bops
S
High State
Low State
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