參數(shù)資料
型號(hào): AP9975GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 7.6 A, 60 V, 0.021 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 62K
代理商: AP9975GM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
60V
▼ Lower On-resistance
RDS(ON)
21mΩ
▼ Surface Mount Package
ID
7.6A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃/W
Data and specifications subject to change without notice
1
AP9975GM
RoHS-compliant Product
201011182
Parameter
Rating
Drain-Source Voltage
60
Gate-Source Voltage
+25
Continuous Drain Current
3, V
GS @ 10V
7.6
Continuous Drain Current
3, V
GS @ 10V
6.1
Pulsed Drain Current
1
30
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Thermal Data
Parameter
Storage Temperature Range
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
S1
G1
S2
G2
D1
D2
SO-8
G2
D2
S2
G1
D1
S1
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