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參數(shù)資料
| 型號(hào)： | AP9973GI |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 14 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 120K |
| 代理商： | AP9973GI |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=9A
-
80
mΩ
VGS=4.5V, ID=6A
-
100
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=9A
-
8.6
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=48V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=9A
-
8
13
nC
Qgs
Gate-Source Charge
VDS=48V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
2
VDS=30V
-
7
-
ns
tr
Rise Time
ID=9A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=3.3Ω
-3
-
ns
Ciss
Input Capacitance
VGS=0V
-
720
1150
pF
Coss
Output Capacitance
VDS=25V
-
77
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=14A, VGS=0V
-
1.2
V
t
rr
Reverse Recovery Time
2
IS=9A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
27
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP9973GI
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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