參數(shù)資料
型號(hào): AP9971GM-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 5 A, 60 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件頁數(shù): 4/4頁
文件大?。?/td> 95K
代理商: AP9971GM-HF
AP9971GM-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
10
100
1000
10000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
Ciss
Crss
Coss
0
2
4
6
8
10
12
0
5
10
15
20
25
30
35
40
Q G , Total Gate Charge (nC)
V
GS
,
Gate
to
S
o
u
rc
eVoltage
(V)
V DS =30V
V DS =38V
V DS =48V
I D =5A
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS
QGD
QG
Charge
0.01
0.1
1
10
100
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
t
T
Rthja = 135℃/W
0.02
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